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Keysight Technologies
Thyristor Characterization Using the Keysight
B1505A Power Device Analyzer/Curve Tracer
Application Note
N1268A Ultra High Voltage Expander
N1265A Ultra High Current Expander/Fixture N1266A
HVSMU Current Expander
B1505A Power Device Analyzer/Curve Tracer
Introduction
Thyristors, which behave like current-triggered diodes, have the unique current-
voltage (IV) characteristics shown in Figure 1. This discontinuous behavior means
that the characterization of a thyristor's DC parameters requires different methodol-
ogies than those used to characterize power devices such as IGBTs and high-power
MOSFETs.
For example, before measuring thyristor holding current (IH) you must irst turn on
the thyristor. Similarly, characterizing latching current (IL) requires a looping test
sequence of triggering and measurement.
This application note provides an overview of thyristor electrical characterization
using the B1505A.
Anode Current
ON State
Reverse breakdown Gate current
voltage IG3 > IG2 > IG1 > 0 A
Hold Current IG1 IG = 0 A
(IH) IG3 IG2 Off-state leakage
Reverse leakage current (IDRM)
current (IRRM) OFF State Anode Voltage
Reverse Blocking On Voltage
State (VTM) Breakover voltage
Figure 1. I-V characteristics of thyristor
Typical Thyristor Parameters
The static parameters listed in a typical thyristor data sheet are summarized in Table 1.
The right-most column indicates the B1505A's measurement range for each parameter.
Table 1. Typical DC parameters of thyristor and the compatibility of the B1505A
Typical
Measurement Typical Measurable Range
Typical Thyristor Parameter Symbol Unit Measurement 1 Module by B1505A
--1500 A to 1500 A 2
Anode Characteristics la I la-Vak UHCU (Minimum 500 A resolution)
--10 kV to 10 kV3
Max. peak off-state leakage current IDRM I la-Vak UHVU (Minimum 10 mV resolution)
--10 kV to 10 kV3
Max. peak reverse leakage current IRRM I la-Vak UHVU (Minimum 10 mV resolution)
--1500 A to 1500 A 2
Max. on-state voltage VTM V la-Vak UHCU (Minimum 500 A resolution)
--30 V to 30 V
DC gate triggering voltage VGT V la-lg MCSMU 4 (Minimum 0.2 V resolution)
--100 mA to 100 mA
DC gate triggering current IGT A la-lg MCSMU (Minimum 10 pA resolution)
--30 V to 30 V
DC gate voltage not to trigger VGD V la-lg MCSMU (Minimum 0.2 V resolution)
--100 mA to 100 mA
DC gate current not to trigger IGD A la-lg MCSMU (Minimum 10 pA resolution)
--1 A to 1 A5
DC (Maximum) holding current IH A Va-la HPSMU (Minimum 50 fA resolution)
--1 A to 1 A5
DC lathing current IL A Va-la HPSMU (Minimum 50 fA resolution)
--1 A to 1 A6
Gate diode characteristics Ig A If-Vf MCSMU (Minimum 10 pA resolution)
1. Measurement used for extracting the parameter.
2. UHCU: Ultra High Current Unit 60 V/1500 A. HCSMU: High Current SMU 40 V/20 A, HPSMU: High Power SMU 200 V/1 A.
3. UHVU: Ultra High Voltage Unit 10 kV/20 mA. HVMCU: High Voltage Medium Current Unit 2.2 kV/2.5 A, HVSMU: High Voltage SMU 3 kV/8 mA.
4. MCSMU: Medium Current SMU 30 V/1 A
5. HPSMU: High Power SMU 200 V/1 A. HCSMU can be used. (Same maximum DC current range.)
6. Pulse mode. HCSMU: 20 A.
3
Thyristor Measurement
Example
The following section describes an
Indicates optional R
example thyristor measurement using
the B1505A. & V drop compensation
1. Ia-Vak characteristics
An Ia-Vak application test is available Connection diagram
to perform Ia-Vak characterization on
a thyristor.
Figure 2 shows the Ia-Vak application
test's graphical user interface (GUI).
The intuitive GUI provides the follow-
ing beneits:
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