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Keysight Technologies
On Determining Critical Stresses
in Semiconductors: A Case Study
on ZnO Crystal and GaN Freestanding Film
Application Note
Introduction                                    heteroepitaxy results in high dislocation        application note, we discuss a nanoinden-
                                                densities and a high level of post-growth        tation method using spherical indentation
Wide band-gap semiconductors, such as           residual strain in the GaN ilm, which inevi-     probes to characterize the elastic-plastic
zinc oxide (ZnO) and gallium nitride (GaN)      tably affects its physical properties.           transition behavior and determine critical
are getting a lot of attention for their                                                         failure stresses in ZnO and GaN single
                                                Similarly, single crystal ZnO - a II-VI wide     crystals with (0001) orientation. Nanoin-
applications in optoelectronic and power
                                                band-gap semiconductor - has received            dentation using a spherical probe results
devices. Single crystal GaN, a III-V wide
                                                a good amount of attention in the recent         in an extended elastic deformation regime,
band-gap semiconductor, has received a
                                                past due to its potential application in         and a gradual transition to elastic-plastic
great deal of attention in the recent past
                                                short wavelength optoelectronic devices          deformation, to enable the characteriza-
due to its potential for the realization of
                                                due to some advantages over the more             tion of critical failure stresses.
photonic devices such as laser and light
                                                popular GaN.5 For example, ZnO has a
emitting diodes (LEDs) operating in the
                                                simpler crystal growth technology, which         Experimental
ultraviolet portion of the electromagnetic
                                                translates to a lower cost material. ZnO
spectrum as well as solar-blind photo-de-                                                        The nanoindentation experiments were
                                                can also be easily etched in acids and
tectors.1 Its wide band-gap, high break-                                                         carried out in a Nanoindenter G200 using
                                                alkalis, providing an opportunity of fab-
down ield, and high electron saturation                                                          spherical diamond probes with tip radii 1
                                                rication of small-scale devices. Recently,
velocity also make it an attractive can-                                                         and 13.5

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