Service Manuals, User Guides, Schematic Diagrams or docs for : Dell AO4601

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AO4601
Complementary Enhancement Mode Field Effect Transistor

 General Description                                    Features
                                                        n-channel              p-channel
 The AO4601 uses advanced trench technology             VDS (V) = 30V         -30V
 MOSFETs to provide excellent RDS(ON) and low           ID = 4.7A (VGS=10V) -8A (VGS = -20V)
 gate charge. The complementary MOSFETs may             RDS(ON)             RDS(ON)
 be used to form a level shifted high side switch,      < 55m (VGS=10V)        < 18m (VGS = -20V)
 and for a host of other applications. Standard         < 70m (VGS=4.5V)       < 19m (VGS = -10V)
 Product AO4601 is Pb-free (meets ROHS & Sony
                                                        < 110m (VGS = 2.5V)
 259 specifications). AO4601L is a Green Product
 ordering option. AO4601 and AO4601L are

                                                                D2                    D1


       S2    1   8     D2
       G2    2   7     D2
       S1    3   6     D1
       G1    4   5     D1                               G2                    G1
                                                                S2                    S1
            SOIC-8
                                                        n-channel             p-channel

Absolute Maximum Ratings TA=25

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