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w w w . k e i t h l e y . c o m | a g r e a t e r m e a s u r e o f c o n f i d e n c e
Exploring the boundaries of
materials science or device development?
Learn the latest techniques for ensuring
electrical measurement accuracy
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Learn how you can get better correlation of results when you
perform multiple measurement types on a single system
Characterizing a semiconductor device, material, or process thoroughly requires
the ability to make three types of measurements: precision DC I-V measurements,
AC impedance measurements (often made with a C-V meter), and ultra-fast or
transient I-V measurements. Until recently, labs might have required three separate
test systems to obtain all three measurement types. In addition to added expense,
using multiple systems makes it difficult to combine different measurement types in
a single application or to correlate the results from different types of measurements
accurately. Learn more.
Investigate how to get better Remote amplifier/switches and the multi-measurement performance cabling
results correlation at a lower cost. used to connect them to the probe manipulators on the wafer prober are
critical to integrating accurate ultra-fast I-V, C-V, and precision DC I-V
Download our free white paper. measurements into the same parametric analysis system.
Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 2
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Tackle multiple test challenges with the
Model 4200-SCS Semiconductor Characterization System
Only the Model 4200-SCS Semiconductor Characterization System can
handle all three measurement types: precision DC I-V, AC impedance, and ultra-
fast I-V or transient I-V. Low current measurement resolution can extend to 0.1fA.
Capacitance measurements range from femtoFarads (fF) to nanoFarads (nF) at
frequencies from 1kHz to 10MHz. And ultra-fast I-V sourcing and measurement
is as easy as making DC measurements, and fast: measure both voltage and
current simultaneously for up to one million samples at 5ns per sample.
Bundled Characterization Solutions Available
Learn how to get more for your capital budget with Keithley's bundled
characterization solutions. Learn more now.
Need more details? Download the Ready to request a quote or place an order?
Model 4200-SCS data sheet. Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 3
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Ultra-fast I-V testing of compound semiconductor
devices and materials
Pulsed I-V testing is often performed on devices made from III-V materials, such as GaN,
GaAs, and other compound semiconductor materials. These larger band gap devices are
often used in higher power and RF devices. Pulsed I-V measurements make it possible
to manage or investigate the effects of dispersion during electrical characterization.
Sometimes it is necessary to test devices at higher frequencies in order to simulate the
conditions the actual device will encounter in regular use. Laser diodes and power
MOSFETs are two common compound semiconductor devices that often require pulse I-V
measurements for characterization. Learn more.
Want to make ultra-fast
I-V measurements?
Download our free guide to
ultra-fast I-V applications.
Laser diode test configuration
View our webinar
on making ultra-fast
measurements. Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 4
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Take control of ultra-high speed pulse sourcing
and measurement with the Model 4225-PMU
The Model 4225-PMU Ultra Fast I-V Module is the latest instrumentation option
for the Model 4200-SCS Semiconductor Characterization System. It integrates
ultra-fast voltage waveform generation and signal observation capabilities into the
Model 4200-SCS's already powerful test environment to deliver unprecedented
I-V testing performance, expanding the system's materials, device, and process
characterization potential dramatically. Just as important, it makes ultra-fast I-V
sourcing and measurement as easy as making DC measurements with a traditional
high resolution Source-Measure Unit (SMU).
Need more details? Download our
Model 4225-PMU data sheet.
Ready to request a quote or place an order?
Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 5
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Learn how to determine solar cell efficiency using
the latest electrical characterization techniques
Some of the electrical tests commonly performed on solar cells involve measuring
current and capacitance as a function of an applied DC voltage. Electrical
characterization is important in determining how to make the cells as efficient as
possible with minimal losses. Capacitance measurements are sometimes made as
a function of frequency or AC voltage. Some tests require pulsed current-voltage
measurements. These measurements are usually performed at different light
intensities and under different temperature conditions. A variety of important
device parameters can be extracted from the DC and pulsed current-voltage (I-V)
and capacitance-voltage (C-V) measurements, including output current, conversion
efficiency, maximum power output, doping density, resistivity, etc. Learn more.
Discover how to make faster, more accurate
C-V measurements on solar cells. Download C-V sweep of a silicon solar cell
our application note.
Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 6
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Plug in to greater capacitance-voltage measurement
capabilities with the Model 4210-CVU
The Model 4210-CVU, the Model 4200-SCS's optional capacitance meter,
can measure capacitance as a function of an applied DC voltage (C-V), a
function of frequency (C-f), a function of time (C-t), or a function of the
AC voltage. The Model 4210-CVU can also measure conductance and
impedance. The Keithley Test Environment Interactive (KTEI) package
combines nine new solar cell test libraries with an expanded C-V frequency
measurement range, which supports testing flat panel LCDs and organic
semiconductors such as organic light-emitting diodes (OLEDs).
Need more details?
Learn more online.
Ready to request a quote or place an order?
Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 7
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Learn Low Current Measurement Methods
for New Devices/Materials
Low current (from nA to fA) electrical measurements are important
for applications in semiconductor material/device characterization,
nanoscience test and measurement, optoelectronic device
characterization, and many more. Our archived online seminar describes
low current measurement basics, including how to select the right
current measurement instrument, practical ways to reduce current noise
in measurement setups, and how to quantify subtle sources of noise.
Application examples where such sensitive measurements are required
will be discussed, together with a discussion of recent innovative test
equipment solutions. Learn more.
Johnson current noise is dependent upon many factors,
including the source resistance of the DUT.
Learn about low current
measurement methods for Let us offer advice on your application.
your application. Contact an applications engineer online.
View our online webinar.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 8
Semiconductor Parameter Analysis 2 | Pulsed I-V Testing of Compound Semi Devices/Materials 4 | C-V Characterization of Solar Cells 6 | Low Current Measurement of New Devices/Materials 8 | I DDq Testing 10
Ultra-Low Current Measurements 12 | Focused ion Beam Current Monitoring 14 | Hall Effect & Graphene-Based Materials 16 | Characterization of Small Crystals 18 | High Power Semi Device Testing 20
Get DC and pulsed measurements in the same box with
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