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N-Channel Enhancement Mode Field Effect Transistor
General Description Features
SRFET The AO4726/L uses advanced trench
technology with a monolithically integrated Schottky VDS (V) = 30V
diode to provide excellent R DS(ON) and low gate charge. ID =18A (VGS = 10V)
This device is suitable for use as a low side FET in RDS(ON) < 6m (VGS = 10V)
SMPS, load switching and general purpose RDS(ON) < 7m (VGS = 4.5V)
applications. AO4726 and AO4726L are electrically
-RoHS Compliant UIS TESTED!
-AO4726L is Halogen Free Rg,Ciss,Coss,Crss Tested
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T A=25
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