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                                                                                     CEG8205A
Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

  20V, 6A, RDS(ON) = 25m @VGS = 4.5V.

           RDS(ON) = 35m @VGS = 2.5V.

  Super High dense cell design for extremely low RDS(ON).

  High power and current handing capability.
                                                                            D    1                          8 D
  Lead free product is acquired.
                                                                            S1   2                          7 S2
  TSSOP-8 for Surface Mount Package.
                                                                            S1   3                          6 S2

                                                                            G1   4                          5 G2
                                               G2
                                              S2
                                             S2
                                            D                        G1
                                                                    S1
                                                                   S1
                                                                  D

                                                    TSSOP-8




ABSOLUTE MAXIMUM RATINGS                               TA = 25 C unless otherwise noted
                     Parameter                                Symbol                   Limit                  Units
  Drain-Source Voltage                                             VDS                    20                   V
  Gate-Source Voltage                                              VGS                 

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