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                                                                                                     CEH2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES

  20V, 3.5A, RDS(ON) = 60m @VGS = 4.5V.
              RDS(ON) = 80m @VGS = 2.5V.
  -20V, -2.5A, RDS(ON) = 100m @VGS = -4.5V.
               RDS(ON) = 145m @VGS = -2.5V.
  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.                                                               D1(6)            D2(4)


  Lead free product is acquired.
                                                         4
  Surface mount Package.                             5
                                                 6                                       G1(1)                     G2(3)

                                                                                   3
                                                                               2
                                                                           1                               S1(5)            S2(2)

                                                             TSOP-6



ABSOLUTE MAXIMUM RATINGS                             TA = 25 C unless otherwise noted
                      Parameter                              Symbol                    N-Channel          P-Channel        Units
  Drain-Source Voltage                                            VDS                     20                   -20          V
  Gate-Source Voltage                                             VGS                    

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