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ceh2310


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                                                                                                   CEH2310
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

  30V, 6.2A , RDS(ON) = 33m @VGS = 10V.
              RDS(ON) = 38m @VGS = 4.5V.
              RDS(ON) = 50m @VGS = 2.5V.
              RDS(ON) = 60m @VGS = 1.8V.
                                                                                                            D(1,2,5,6,)
  High dense cell design for extremely low RDS(ON).

  Rugged and reliable.

  Lead-free plating ; RoHS compliant.
                                                         4
  TSOP-6 package.                                    5
                                                 6                                      G(3)
                                                                                    3
                                                                                2
                                                                            1
                                                               TSOP-6                                       S(4)




ABSOLUTE MAXIMUM RATINGS                                     TA = 25 C unless otherwise noted
                      Parameter                                   Symbol                         Limit                    Units
  Drain-Source Voltage                                                VDS                         30                       V
  Gate-Source Voltage                                                 VGS                        



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