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                                                                                            CEH2321A
P-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



FEATURES

  -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V.
              RDS(ON) = 62m @VGS = -2.5V.
  High dense cell design for extremely low RDS(ON).

  Rugged and reliable.                                                                                   D(1,2,5,6,)

  Lead-free plating ; RoHS compliant.

  TSOP-6 package.
                                                      4
                                                  5
                                              6                                      G(3)
                                                                                 3
                                                                             2
                                                                         1
                                                            TSOP-6                                       S(4)




ABSOLUTE MAXIMUM RATINGS                                  TA = 25 C unless otherwise noted
                     Parameter                                 Symbol                         Limit                    Units
  Drain-Source Voltage                                             VDS                         -20                      V
  Gate-Source Voltage                                              VGS                        

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