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                                                                                                 CEH3456
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

  30V, 5.5A, RDS(ON) = 42m @VGS = 10V.
             RDS(ON) = 59m @VGS = 4.5V.
  High dense cell design for extremely low RDS(ON).

  Rugged and reliable.
                                                                                                          D(1,2,5,6,)
  Lead free product is acquired.

  TSOP-6 package.

                                                      4
                                                  5
                                              6                                       G(3)
                                                                                  3
                                                                              2
                                                                          1
                                                            TSOP-6                                        S(4)




ABSOLUTE MAXIMUM RATINGS                                  TA = 25 C unless otherwise noted
                     Parameter                                 Symbol                          Limit                    Units
  Drain-Source Voltage                                           VDS                            30                       V
  Gate-Source Voltage                                            VGS                           

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