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                                                                                                    CEH8205
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

  20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V.
              RDS(ON) TYP = 30m @VGS = 2.5V.
  High dense cell design for extremely low RDS(ON).

  Rugged and reliable.

  Lead free product is acquired.
                                                                                                     D1(2)               D2(5)
  TSOP-6 package.

  Halogen free.
                                                         4
                                                     5
                                                 6                                      G1(6)                G2(4)

                                                                                    3
                                                                                2
                                                                            1                        S1(1)               S2(3)

                                                               TSOP-6



ABSOLUTE MAXIMUM RATINGS                                     TA = 25 C unless otherwise noted
                      Parameter                                   Symbol                          Limit                     Units
  Drain-Source Voltage                                                VDS                          20                        V
  Gate-Source Voltage                                                 VGS                         

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