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N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
650V, 0.35A, RDS(ON) = 10.5 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
G
G
D G
S D
S
TO-92(Ammopack) TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS
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