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                                                                                      CEM2539A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                              D1                         D2

                                                                                                                                      5
  20V, 7.5A, RDS(ON) = 22m @VGS = 10V.
             RDS(ON) = 25m @VGS = 4.5V.
                                                                           G1                          G2
             RDS(ON) = 40m @VGS = 2.5V.
  -20V, -4A, RDS(ON) = 80m @VGS = -10V.
               RDS(ON) = 100m @VGS = -4.5V.
                                                                                             S1                         S2
               RDS(ON) = 150m @VGS = -2.5V.
                                                                                      D1      D1        D2         D2
  Super high dense cell design for extremely low RDS(ON).                              8          7         6      5


  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.                         SO-8
                                                             1
                                                                                       1          2         3      4
                                                                                       S1         G1        S2     G2




ABSOLUTE MAXIMUM RATINGS                                TA = 25 C unless otherwise noted
                      Parameter                              Symbol         N-Channel                 P-Channel               Units
  Drain-Source Voltage                                           VDS            20                          -20                V
  Gate-Source Voltage                                            VGS            

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