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                                                                                         CEM3109
Dual Enhancement Mode Field Effect Transistor (N and P Channel)                                                PRELIMINARY



FEATURES

  30V, 10A, RDS(ON) = 14m @VGS = 10V.
            RDS(ON) = 20m @VGS = 4.5V.

  -30V, -8A, RDS(ON) = 20m @VGS = -10V.
            RDS(ON) = 30m @VGS = -4.5V.

  Super high dense cell design for extremely low RDS(ON).                           D1         D1    D2   D2
                                                                                    8          7     6    5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.

                                            SO-8
                                                                                    1          2     3    4
                                                            1                       S1         G1    S2   G2




ABSOLUTE MAXIMUM RATINGS                             TA = 25 C unless otherwise noted
                     Parameter                              Symbol        Channel 1            Channel 2          Units
  Drain-Source Voltage                                           VDS         30                     -30            V
  Gate-Source Voltage                                            VGS         

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