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                                                                                            CEM3138
Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES
                                                                                                                                5
  30V, 9.1A, RDS(ON) = 15m @VGS = 10V.
             RDS(ON) = 21m @VGS = 4.5V.

  30V, 6.9A, RDS(ON) = 26m @VGS = 10V.
             RDS(ON) = 35m @VGS = 4.5V.

  Super high dense cell design for extremely low RDS(ON).                              D1         D1    D2    D2
                                                                                       8          7     6     5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.

                                                 SO-8
                                                                                       1          2     3     4
                                                             1                         S1         G1    S2    G2




ABSOLUTE MAXIMUM RATINGS                                TA = 25 C unless otherwise noted
                      Parameter                              Symbol         Channel 1             Channel 2        Units
  Drain-Source Voltage                                           VDS            30                     30           V
  Gate-Source Voltage                                            VGS            

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