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                                                                                          CEM3317
P-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



FEATURES

  -30V, -6.2A, RDS(ON) = 33m @VGS = -10V.
              RDS(ON) = 52m @VGS = -4.5V.
  -30V, -4.9A, RDS(ON) = 52m @VGS = -10V.
               RDS(ON) = 85m @VGS = -4.5V.
  Super high dense cell design for extremely low RDS(ON).
                                                                                     D1         D1    D2    D2
                                                                                     8          7     6     5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.


                                            SO-8
                                                                                     1          2     3     4
                                                            1                        S1         G1    S2    G2




ABSOLUTE MAXIMUM RATINGS                             TA = 25 C unless otherwise noted
                     Parameter                              Symbol       Channel 1              Channel 2           Units
  Drain-Source Voltage                                          VDS          -30                     -30             V
  Gate-Source Voltage                                           VGS          

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