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                                                                                          CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES

  40V, 6.1A, RDS(ON) = 32m @VGS = 10V.
             RDS(ON) = 46m @VGS = 4.5V.

  -40V, -5.2A, RDS(ON) = 43m @VGS = 10V.
               RDS(ON) = 65m @VGS = 4.5V.

  Super high dense cell design for extremely low RDS(ON).                            D1         D1    D2    D2
                                                                                     8          7     6     5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.

                                             SO-8
                                                                                     1          2     3     4
                                                            1                        S1         G1    S2    G2




ABSOLUTE MAXIMUM RATINGS                              TA = 25 C unless otherwise noted
                     Parameter                              Symbol        Channel 1             Channel 2        Units
  Drain-Source Voltage                                           VDS          40                     -40          V
  Gate-Source Voltage                                            VGS          

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