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                                                                                            CEM4279
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                                                                 5
  40V, 6.1A, RDS(ON) = 32m @VGS = 10V.
              RDS(ON) = 46m @VGS = 4.5V.
  -40V, -4.3A, RDS(ON) = 66m @VGS = -10V.
               RDS(ON) = 105m @VGS = -4.5V.
  Super high dense cell design for extremely low RDS(ON).                             D1    D1     D2         D2
                                                                                      8      7      6         5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.


                                                 SO-8                                 1      2      3         4
                                                             1                        S1    G1     S2         G2




ABSOLUTE MAXIMUM RATINGS                                TA = 25 C unless otherwise noted
                      Parameter                              Symbol         N-Channel             P-Channel         Units
  Drain-Source Voltage                                           VDS            40                      -40          V
  Gate-Source Voltage                                            VGS            

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