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                                                                                        CEM8958
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                                                            5
 30V, 7A, RDS(ON) = 28m @VGS = 10V.
          RDS(ON) = 40m @VGS = 4.5V.
 -30V, -5.2A, RDS(ON) = 52m @VGS = -10V.
             RDS(ON) = 80m @VGS = -4.5V.
 Super high dense cell design for extremely low RDS(ON).
                                                                                   D1     D1       D2     D2
 High power and current handing capability.                                        8          7     6     5

 Lead free product is acquired.
 Surface mount Package.



                                           SO-8
                                                                                   1          2     3     4
                                                           1                       S1         G1    S2    G2




ABSOLUTE MAXIMUM RATINGS                            TA = 25 C unless otherwise noted
                    Parameter                              Symbol        N-Channel            P-Channel        Units
 Drain-Source Voltage                                           VDS         30                     -30          V
 Gate-Source Voltage                                            VGS         

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