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                                                                                            CEM8968
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                                                                 5
  30V, 7A, RDS(ON) = 28m @VGS = 10V.
            RDS(ON) = 40m @VGS = 4.5V.
  -30V, -6.2A, RDS(ON) = 33m @VGS = -10V.
               RDS(ON) = 52m @VGS = -4.5V.
  Super high dense cell design for extremely low RDS(ON).                            D1     D1     D2         D2
                                                                                     8       7      6         5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.


                                                 SO-8                                1       2      3         4
                                                             1                        S1    G1     S2         G2




ABSOLUTE MAXIMUM RATINGS                                TA = 25 C unless otherwise noted
                      Parameter                              Symbol         N-Channel             P-Channel         Units
  Drain-Source Voltage                                           VDS            30                      -30          V
  Gate-Source Voltage                                            VGS            

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