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                                                       CEP04N6/CEB04N6
                                                               CEF04N6
 N-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



 FEATURES
         Type        VDSS     RDS(ON)       ID      @VGS
   CEP04N6           600V      2.4         4.2A     10V
   CEB04N6           600V      2.4         4.2A     10V
   CEF04N6           600V      2.4         4.2A d   10V


   Super high dense cell design for extremely low RDS(ON).                                               D

   High power and current handing capability.
   Lead-free plating ; RoHS compliant.



                D                                                                   G


                                 G                         G
     G                           D                             D
        S                         S                                                                      S
                                                                   S
    CEB SERIES                        CEP SERIES                       CEF SERIES
    TO-263(DD-PAK)                    TO-220                           TO-220F



 ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                     Limit
                      Parameter                            Symbol                                                     Units
                                                                           TO-220/263                 TO-220F
   Drain-Source Voltage                                                VDS                    600                      V
   Gate-Source Voltage                                                 VGS                    

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