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                                                  CEP04N7G/CEB04N7G
                                                           CEF04N7G
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
       Type        VDSS      RDS(ON)           ID     @VGS
   CEP04N7G        700V      3.3             4A       10V
   CEB04N7G        700V      3.3             4A       10V
   CEF04N7G        700V      3.3             4A d     10V

  Super high dense cell design for extremely low RDS(ON).
                                                                                                             D
  High power and current handing capability.
  Lead free product is acquired.




              D                                                                       G


                                G                            G
   G                            D                                D
      S                          S                                   S                                        S
  CEB SERIES                             CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)                         TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                                Tc = 25 C unless otherwise noted
                                                                                       Limit
                      Parameter                              Symbol                                                     Units
                                                                            TO-220/263                   TO-220F
  Drain-Source Voltage                                                   VDS                      700                     V
  Gate-Source Voltage                                                    VGS                     

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