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                                                        CEP05N65/CEB05N65
                                                                 CEF05N65
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
        Type       VDSS      RDS(ON)            ID      @VGS
  CEP05N65         650V       2.4              4.5A      10V
  CEB05N65         650V       2.4              4.5A      10V
  CEF05N65         650V       2.4              4.5A d    10V


  Super high dense cell design for extremely low RDS(ON).                                                      D

  High power and current handing capability.
  Lead-free plating ; RoHS compliant.



               D                                                                        G


                                  G                            G
    G                             D                                D
      S                            S                                                                            S
                                                                       S
  CEB SERIES                               CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)                           TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                                  Tc = 25 C unless otherwise noted
                                                                                         Limit
                      Parameter                                Symbol                                                     Units
                                                                                TO-220/263                 TO-220F
  Drain-Source Voltage                                                     VDS                      650                     V
  Gate-Source Voltage                                                      VGS                     

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