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cep06n7_ceb06n7_cef06n7


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                                                      CEP06N7/CEB06N7
                                                              CEF06N7
N-Channel Enhancement Mode Field Effect Transistor                                                              PRELIMINARY



FEATURES
       Type        VDSS      RDS(ON)       ID    @VGS
  CEP06N7          700V        2          6A       10V
  CEB06N7          700V        2          6A       10V
  CEF06N7          700V        2          6A d     10V


  Super high dense cell design for extremely low RDS(ON).                                                D

  High power and current handing capability.
  Lead-free plating ; RoHS compliant.



              D                                                                   G


                              G                          G
   G                          D                              D
      S                        S                                 S
  CEB SERIES                       CEP SERIES                        CEF SERIES                           S
  TO-263(DD-PAK)                   TO-220                            TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                    Units
                                                                          TO-220/263      TO-220F
  Drain-Source Voltage                                               VDS                      700                     V
  Gate-Source Voltage                                                VGS                      



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