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                                                CEP08N6A/CEB08N6A
                                                         CEF08N6A
N-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



FEATURES
       Type        VDSS      RDS(ON)       ID      @VGS
  CEP08N6A         600V       1.25        7.5A     10V
  CEB08N6A         600V       1.25        7.5A     10V
  CEF08N6A         600V       1.25        7.5A d   10V


  Super high dense cell design for extremely low RDS(ON).                                                 D

  High power and current handing capability.
  Lead-free plating ; RoHS compliant.



              D                                                                    G


                              G                           G
   G                          D                               D
      S                        S                                  S
  CEB SERIES                       CEP SERIES                         CEF SERIES                           S
  TO-263(DD-PAK)                   TO-220                             TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                     Units
                                                                          TO-220/263      TO-220F
  Drain-Source Voltage                                                VDS                      600                     V
  Gate-Source Voltage                                                 VGS                      

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