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                                                     CEP01N65/CEB01N65
                                                              CEF01N65
N-Channel Enhancement Mode Field Effect Transistor                                                                    PRELIMINARY



FEATURES
       Type        VDSS      RDS(ON)         ID      @VGS
  CEP01N65         650V       10.5          1.3A      10V
  CEB01N65         650V       10.5          1.3A      10V
  CEF01N65         650V       10.5          1.3A d    10V


  Super high dense cell design for extremely low RDS(ON).                                                   D

  High power and current handing capability.
  Lead free product is acquired.



              D                                                                      G


                                   G                        G
   G                               D                            D
      S                             S                               S
  CEB SERIES                            CEP SERIES                      CEF SERIES                           S
  TO-263(DD-PAK)                        TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                               Tc = 25 C unless otherwise noted
                                                                                      Limit
                     Parameter                              Symbol                                                       Units
                                                                           TO-220/263                   TO-220F
  Drain-Source Voltage                                                  VDS                      650                       V
  Gate-Source Voltage                                                   VGS                     

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