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cep02n65a_ceb02n65a_cef02n65a


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                                       CEP02N65A/CEB02N65A
                                                 CEF02N65A
N-Channel Enhancement Mode Field Effect Transistor                                                                PRELIMINARY



FEATURES
       Type        VDSS      RDS(ON)       ID      @VGS
  CEP02N65A        650V       10.5        1.3A     10V
  CEB02N65A        650V       10.5        1.3A     10V
  CEF02N65A        650V       10.5        1.3A d   10V


  Super high dense cell design for extremely low RDS(ON).                                                  D

  High power and current handing capability.
  Lead free product is acquired.



              D                                                                    G


                              G                           G
   G                          D                               D
      S                        S                                  S
  CEB SERIES                       CEP SERIES                         CEF SERIES                           S
  TO-263(DD-PAK)                   TO-220                             TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                     Units
                                                                          TO-220/263      TO-220F
  Drain-Source Voltage                                                VDS                      650                     V
  Gate-Source Voltage                                                 VGS                      



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