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                                        CEP02N65G/CEB02N65G
                                                  CEF02N65G
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
     Type             VDSS   RDS(ON)             ID      @VGS
  CEP02N65G           650V    5.5                2A      10V
  CEB02N65G           650V    5.5                2A      10V
  CEF02N65G           650V    5.5                2A d    10V


  Super high dense cell design for extremely low RDS(ON).                                                       D

  High power and current handing capability.
  Lead free product is acquired.



                D                                                                        G


                                   G                            G
      G                            D                                D
         S                          S                                                                            S
                                                                        S
     CEB SERIES                             CEP SERIES                      CEF SERIES
     TO-263(DD-PAK)                         TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                                   Tc = 25 C unless otherwise noted
                                                                                          Limit
                       Parameter                                Symbol                                                     Units
                                                                                 TO-220/263                 TO-220F
  Drain-Source Voltage                                                      VDS                       650                    V
  Gate-Source Voltage                                                       VGS                       

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