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                                                   CEP02N6G/CEB02N6G
                                                            CEF02N6G
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
        Type       VDSS      RDS(ON)             ID      @VGS
  CEP02N6G         600V       5                 2.2A     10V
  CEB02N6G         600V       5                 2.2A     10V
  CEF02N6G         600V       5                 2.2A d   10V


  Super high dense cell design for extremely low RDS(ON).                                                       D

  High power and current handing capability.
  Lead free product is acquired.



               D                                                                         G


                                   G                            G
    G                              D                                D
      S                             S                                                                            S
                                                                        S
  CEB SERIES                                CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)                            TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                                   Tc = 25 C unless otherwise noted
                                                                                          Limit
                      Parameter                                 Symbol                                                     Units
                                                                               TO-220/263                   TO-220F
  Drain-Source Voltage                                                      VDS                      600                     V
  Gate-Source Voltage                                                       VGS                     

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