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                                             CEP02N7G/CEB02N7G
                                                      CEF02N7G
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
       Type        VDSS      RDS(ON)       ID     @VGS
   CEP02N7G        700V      6.75         2A      10V
   CEB02N7G        700V      6.75         2A      10V
   CEF02N7G        700V       6.75         2A d    10V


  Super high dense cell design for extremely low RDS(ON).                                                D
  High power and current handing capability.
  Lead free product is acquired.



              D                                                                   G


                                G                        G
   G                            D                            D
      S                          S                               S                                          S
  CEB SERIES                         CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)                     TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                      Parameter                           Symbol                                                    Units
                                                                         TO-220/263                  TO-220F
  Drain-Source Voltage                                               VDS                      700                     V
  Gate-Source Voltage                                                VGS                     

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