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                                                  CEP10N65/CEB10N65
                                                           CEF10N65
 N-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



 FEATURES
        Type        VDSS      RDS(ON)      ID      @VGS
    CEP10N65        650V      0.85        10A       10V
    CEB10N65        650V      0.85        10A       10V
    CEF10N65        650V      0.85        10A d     10V


   Super high dense cell design for extremely low RDS(ON).                                                D
   High power and current handing capability.
   Lead-free plating ; RoHS compliant.



               D                                                                   G


                                G                         G
    G                           D                             D
       S                         S                                S                                        S
   CEB SERIES                        CEP SERIES                       CEF SERIES
   TO-263(DD-PAK)                    TO-220                           TO-220F



 ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                     Limit
                      Parameter                            Symbol                                                    Units
                                                                          TO-220/263                  TO-220F
   Drain-Source Voltage                                               VDS                      650                     V
   Gate-Source Voltage                                                VGS                     

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