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                                                      CEP12N5/CEB12N5
                                                              CEF12N5
N-Channel Enhancement Mode Field Effect Transistor                                                                PRELIMINARY



FEATURES
       Type        VDSS      RDS(ON)      ID     @VGS
   CEP12N5         500V      0.54        12A       10V
   CEB12N5         500V      0.54        12A       10V
   CEF12N5         500V      0.54        12A d     10V


  Super high dense cell design for extremely low RDS(ON).                                                D
  High power and current handing capability.
  Lead free product is acquired.



              D                                                                   G


                               G                         G
   G                           D                             D
      S                         S                                S                                        S
  CEB SERIES                        CEP SERIES                       CEF SERIES
  TO-263(DD-PAK)                    TO-220                           TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                     Units
                                                                         TO-220/263                  TO-220F
  Drain-Source Voltage                                               VDS                      500                      V
  Gate-Source Voltage                                                VGS                     

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