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                                               CEP13N5A/CEB13N5A
                                                        CEF13N5A
N-Channel Enhancement Mode Field Effect Transistor                                                                PRELIMINARY



FEATURES
     Type           VDSS     RDS(ON)      ID     @VGS
   CEP13N5A         500V     0.48        13A       10V
   CEB13N5A         500V     0.48        13A       10V
   CEF13N5A         500V     0.48        13A d     10V


  Super high dense cell design for extremely low RDS(ON).                                                D
  High power and current handing capability.
  Lead-free plating ; RoHS compliant.



              D                                                                   G


                               G                         G
    G                          D                             D
       S                        S                                S                                        S
   CEB SERIES                       CEP SERIES                       CEF SERIES
   TO-263(DD-PAK)                   TO-220                           TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                     Units
                                                                           TO-220/263                TO-220F
  Drain-Source Voltage                                               VDS                      500                      V
  Gate-Source Voltage                                                VGS                     

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