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                                                                 CEP6601/CEB6601
                                                                         CEF6601
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

  -60V, -19A, RDS(ON) = 86m        @VGS = -10V.
              RDS(ON) = 125m @VGS = -4.5V.

  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.                                                                D
  Lead free product is acquired.




              D
                                                                                    G
                         G                        G
   G                     D                            D
      S                   S                               S
  CEB SERIES                  CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)              TO-220                          TO-220F                                       S




ABSOLUTE MAXIMUM RATINGS                                      Tc = 25 C unless otherwise noted
                                                                                                Limit
                      Parameter                                    Symbol                                               Units
                                                                                 TO-220/263             TO-220F
  Drain-Source Voltage                                                  VDS                      -60                      V
  Gate-Source Voltage                                                   VGS                     

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