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                                                       CEP630N/CEB630N
                                                               CEF630N
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
        Type       VDSS      RDS(ON)         ID      @VGS
  CEP630N          200V        0.36         9A       10V
  CEB630N          200V       0.36          9A       10V
  CEF630N          200V       0.36          9A d     10V


  Super high dense cell design for extremely low RDS(ON).                                                   D

  High power and current handing capability.
  Lead free product is acquired.



               D                                                                     G


                                   G                        G
    G                              D                            D
      S                             S                                                                        S
                                                                    S
  CEB SERIES                            CEP SERIES                      CEF SERIES
  TO-263(DD-PAK)                        TO-220                          TO-220F



ABSOLUTE MAXIMUM RATINGS                               Tc = 25 C unless otherwise noted
                                                                                      Limit
                      Parameter                             Symbol                                                     Units
                                                                           TO-220/263                   TO-220F
  Drain-Source Voltage                                                  VDS                      200                     V
  Gate-Source Voltage                                                   VGS                      

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