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                                                             CEP730G/CEB730G
                                                                     CEF730G
N-Channel Enhancement Mode Field Effect Transistor                                                                    PRELIMINARY



FEATURES
      Type         VDSS        RDS(ON)       ID      @VGS
     CEP730G       400V          1          5.5A     10V
     CEB730G       400V          1          5.5A     10V
     CEF730G       400V          1          5.5A e   10V


                                                                                                             D
  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.
  Lead free product is acquired.


                                                                                     G
             D


                          G                          G
 G                        D                              D
    S                      S                                 S
                                                                                                             S
CEB SERIES                     CEP SERIES                        CEF SERIES
TO-263(DD-PAK)                 TO-220                            TO-220F


ABSOLUTE MAXIMUM RATINGS                                     Tc = 25 C unless otherwise noted
                                                                                            Limit
                     Parameter                                    Symbol                                                 Units
                                                                                 TO-220/263             TO-220F
  Drain-Source Voltage                                                   VDS                     400                       V
  Gate-Source Voltage                                                    VGS                    

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