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                                                      CEP840A/CEB840A
                                                              CEF840A
N-Channel Enhancement Mode Field Effect Transistor                                                                   PRELIMINARY



FEATURES
       Type        VDSS     RDS(ON)       ID      @VGS
   CEP840A         500V      0.85        8.5A      10V
   CEB840A         500V      0.85        8.5A      10V
   CEF840A         500V      0.85        8.5A d    10V


  Super high dense cell design for extremely low RDS(ON).                                                D
  High power and current handing capability.
  Lead-free plating ; RoHS compliant.



              D                                                                   G


                              G                          G
   G                          D                              D
      S                        S                                 S                                        S
  CEB SERIES                       CEP SERIES                        CEF SERIES
  TO-263(DD-PAK)                   TO-220                            TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                        Units
                                                                           TO-220/263                TO-220F
  Drain-Source Voltage                                               VDS                      500                         V
  Gate-Source Voltage                                                VGS                     

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