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                                                  CEP80N15/CEB80N15
                                                           CEF80N15
N-Channel Enhancement Mode Field Effect Transistor                                                              PRELIMINARY



FEATURES
     Type           VDSS     RDS(ON)       ID     @VGS
  CEP80N15          150V     19m          76A      10V
  CEB80N15          150V     19m          76A      10V
  CEF80N15          150V     19m          76A d    10V

  Super high dense cell design for extremely low RDS(ON).
                                                                                                      D
  High power and current handing capability.
  Lead-free plating ; RoHS compliant.
  TO-220 & TO-263 & TO-220F full-pak for through hole.


              D                                                                G


                             G                       G
    G                        D                           D
       S                      S                              S                                         S
   CEB SERIES                     CEP SERIES                     CEF SERIES
   TO-263(DD-PAK)                 TO-220                         TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                     Parameter                            Symbol                                                   Units
                                                                          TO-220/263              TO-220F
  Drain-Source Voltage                                                VDS                  150                       V
  Gate-Source Voltage                                                 VGS                 

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