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                                                           CEP830G/CEB830G
                                                                   CEF830G
N-Channel Enhancement Mode Field Effect Transistor                                                                     PRELIMINARY



FEATURES
      Type         VDSS        RDS(ON)      ID     @VGS
     CEP830G       500V         1.5         5A     10V
     CEB830G       500V         1.5         5A     10V
     CEF830G       500V         1.5         5A e   10V


                                                                                                           D
  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.
  Lead free product is acquired.


                                                                                   G
             D


                          G                        G
 G                        D                            D
    S                      S                               S
                                                                                                           S
CEB SERIES                     CEP SERIES                      CEF SERIES
TO-263(DD-PAK)                 TO-220                          TO-220F


ABSOLUTE MAXIMUM RATINGS                                   Tc = 25 C unless otherwise noted
                                                                                          Limit
                     Parameter                                  Symbol                                                    Units
                                                                               TO-220/263             TO-220F
  Drain-Source Voltage                                                 VDS                     500                          V
  Gate-Source Voltage                                                  VGS                    

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