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                                                       CEP9060N/CEB9060N
                                                                CEF9060N
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
     Type          VDSS       RDS(ON)         ID       @VGS
  CEP9060N          55V       10.5m          90A          10V
  CEB9060N          55V       10.5m          90A          10V
  CEF9060N          55V       10.5m          90A   e
                                                          10V


                                                                                                                  D
  Super high dense cell design for extremely low RDS(ON).
  High power and current handing capability.
  Lead free product is acquired.
  TO-220 & TO-263 package & TO-220F full-pak for through hole.

                                                                                         G
                               D


                                        G                       G
                    G                   D                           D
                       S                 S                              S                                         S
                   CEB SERIES                CEP SERIES                     CEF SERIES
                   TO-263(DD-PAK)            TO-220                         TO-220F



ABSOLUTE MAXIMUM RATINGS                                   Tc = 25 C unless otherwise noted
                                                                                          Limit
                        Parameter                               Symbol                                                    Units
                                                                               TO-220/263       TO-220F
  Drain-Source Voltage                                                      VDS                    55                      V
  Gate-Source Voltage                                                       VGS                   

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