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                                                         CEPF640/CEBF640
                                                                 CEFF640
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
       Type        VDSS      RDS(ON)        ID     @VGS
   CEPF640         200V       0.15         19A     10V
   CEBF640         200V       0.15         19A     10V
   CEFF640         200V       0.15         19A d   10V

  Super high dense cell design for extremely low RDS(ON).
                                                                                                       D
  High power and current handing capability.
  Lead free product is acquired.
  TO-220 & TO-263 & TO-220F full-pak for through hole.


              D                                                                 G


                             G                       G
   G                         D                           D
      S                       S                              S                                          S
  CEB SERIES                       CEP SERIES                    CEF SERIES
  TO-263(DD-PAK)                   TO-220                        TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                      Parameter                           Symbol                                                  Units
                                                                         TO-220/263                TO-220F
  Drain-Source Voltage                                                VDS                   200                     V
  Gate-Source Voltage                                                 VGS                  

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