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ceu4279_ced4279


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                                                           CED4279/CEU4279
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                        D1/D2
  40V , 14A , RDS(ON) = 32m @VGS = 10V.
              RDS(ON) = 46m @VGS = 4.5V.
  -40V , -9A , RDS(ON) = 72m @VGS = 10V.
              RDS(ON) = 110m @VGS = 4.5V.                                  G1                      G2

  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.                                            S1                      S2
                                                                        D1/D2
  Lead free product is acquired.
                                                 S1
  TO-252-4L package.                               G1
                                                    S2
                                                      G2

                                                        CEU SERIES
                                                        TO-252-4L




ABSOLUTE MAXIMUM RATINGS                                Tc = 25 C unless otherwise noted
                      Parameter                              Symbol          N-Channel          P-Channel      Units
  Drain-Source Voltage                                           VDS            40                 40           V
  Gate-Source Voltage                                            VGS



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