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                                                                                                                          2N3570

       NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:
The 2N3570 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.

                                                                                      PACKAGE STYLE TO- 72
MAXIMUM RATINGS
  IC                   50 mA
 VCB                   30 V
  VCE                  15 V
  VEB                  3.0 V
                                      O
 PDISS        200 mW @ TC = 25 C
                   O              O
  TJ           -65 C to +200 C
                   O              O
 TSTG          -65 C to +200 C
                                                                                          1 = EMITTER        2 = BASE
                         O
  JC               500 C/W                                                                3 = COLLECTOR      4 = CASE




CHARACTERISTICS                       O
                              TC = 25 C                                                                 NONE
 SYMBOL                          TEST CONDITIONS                                    MINIMUM TYPICAL MAXIMUM                 UNITS
   BVCEO        IC = 2 mA                                                                15                                  V
   BVCBO        IC = 1.0 

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