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2sa812


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                Guilin Strong Micro-Electronics Co.,Ltd.
GM812




MAXIMUM        RATINGS 

Characteristic                           Symbol             Rating               Unit 
Collector-Emitter Voltage
                                           VCEO               -50                  Vdc
-
Collector-Base Voltage
                                           VCBO               -60                  Vdc
-
Emitter-Base Voltage
                                           VEBO               -5.0                 Vdc
-
Collector Current--Continuous
                                            Ic                -100                mAdc
-



THERMAL       CHARACTERISTICS 
Characteristic                                    Symbol        Max                Unit
                                                                                   
Total Device Dissipation 
                                                   PD                225           mW
 FR-5 Board(1)
TA=25 25
                                                                     1.8          mW/
Derate above25  25
Total Device Dissipation                                             300           mW
                                                   PD
Alumina Substrate ,(2)TA=25
Derate above25  25                                                   2.4          mW/
Thermal Resistance Junction to Ambient
                                                   RJA               417           /W

Junction and Storage Temperature
                                                  TJ,Tstg                  -55to+150



DEVICE       MARKING 

GM812=M4-M7
HFE:90-180=M4 135-270=M5 200-400=M6 300-600=M7
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GM812


ELECTRICAL       CHARACTERISTICS 
   =25 unless otherwise noted  25)
(TA=25                           )
Characteristic                             Symbol     Min     Type    Max     Unit
                                                                              


OFF     CHARACTERISTICS 

Emitter Cutoff Current
                                            IEBO       --      --     -0.1    A
(VEB=-5.0v,IC=0)

Collector Cutoff Current
                                           ICBO        --      --     -0.1    A
(VCB=-60v,IE=0)

Collector Saturation Voltage
                                           VCE(sat)    --     -0.18   -0.3    Vdc
(Ic=-100mAdc,IB=-10mA)

Base to Emitter Voltage
                                            VBE       -0.58   -0.62   -0.68   Vdc
-(VCE=-6.0v,IC=-1.0mA)

DC Current Gain 
                                            HFE        90      200    600
(VCE=-6.0v,IC=-1.0mA)

Gain Bandwidth Product
                                             fT        --     -180     --     MHz
(VCE=-6.0v,IC=-1.0mA)


Output Capacitance
                                            Cob        --      4.5     --     pF
(VCB=-10v,IE=0,f=1.0MHz)


1. FR-5=1.0



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