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Guilin Strong Micro-Electronics Co.,Ltd.
GM3356
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO 12 Vdc
Collector-Base Voltage
VCBO 20 Vdc
Emitter-Base Voltage
VEBO 3.0 Vdc
Collector Current-Continuous
Ic 100 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max
Unit
Total Device Dissipation PD
225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation PD 300 mW
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM3356(2SC3356)=
3356(2SC3356)
GM3356(2SC3356)=R25
HFE:50-100; 80-150; 120-220; 200-300
0-100 80-150; 120-220; 200-
100;
Guilin Strong Micro-Electronics Co.,Ltd.
GM3356
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Typ Max Unit
Emitter Cutoff Current
IEBO -- -- 1.0 A
(VEB=1.0v,IC=0)
Collector Cutoff Current
(VCB=10v,IE=0) ICBO -- -- 1.0 A
Collector-Base Breakdown Voltage
V(BR)CBO 20 -- -- V
(Ic=10uA)
Collector-Emitter Breakdown Voltage
V(BR)CEO 12 -- -- V
(Ic=1mA)
Emitter-Base Breakdown Voltage
V(BR)EBO 3 -- -- V
(IE=10uA)
DC Current Gain
HFE 50 -- 300
(VCE=10v,IC=20mA)
Gain Bandwidth Product
fT -- 7000 -- MHz
(VCE=10v,IC=20mA)
Noise Figure
NF -- -- 2.0 dB
(V CE=10V,Ic=7mA,f=1.0GHz)
Feed-Back Capacitance
Cre -- 0.55 1.0 pF
(VCB=10v,IE=0,f=1.0MHz)
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