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2sk3018


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                 Guilin Strong Micro-Electronics Co.,Ltd.
2SK3018

SOT-23 (SOT-23 Field Effect Transistors)




N-Channel Enhancement-Mode MOS FETs

N  MOS 

MAXIMUM        RATINGS 

Characteristic                     Symbol              Max            Unit 

Drain-Source Voltage
                                    BVDSS               35               V
-
Gate- Source Voltage
                                     VGS                +20              V
-
Drain Current (continuous)
                                     IDR                100             mA
-
Drain Current (pulsed)
                                     IDRM               400             mA
-

THERMAL CHARACTERISTICS 

                                             Symbol       Max           Unit
Characteristic 
                                                                        
Total Device Dissipation                      PD              200       mW
TA=25 25
Derate above25  25                                            1.8      mW/

Thermal Resistance Junction to Ambient        RJA             417       /W

Junction and Storage Temperature
                                             TJ,Tstg           150,-55to+150

                  
                  Guilin Strong Micro-Electronics Co.,Ltd.
2SK3018
DEVICE           MARKING 
2SK3018=KN
2SK3018=
ELECTRICAL CHARACTERISTICS 

(TA=25 unless otherwise noted  25)
Characteristic                             Symbol    Min   Typ   Max     Unit
                                                                         
Drain-Source Breakdown Voltage
                                           BVDSS      35    --    --      V
-(ID =10uA ,VGS=0V)
Gate Threshold Voltage
                                           VGS(th)   0.8    --    2       V
(ID =100uA ,VGS= VDS)
Drain-Source On Voltage
-(ID=50mA ,VGS=5V)                         VDS(ON)    --    --   0.375    V
(ID =400mA ,VGS=10V)                                              3.75
Diode Forward Voltage Drop
                                            VSD       --    --    1.5     V
(ISD=200mA ,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= BVDSS)                        IDSS      --    --    1      uA
(VGS=0V, VDS=0.8BVDSS, TA=125)                                   500
Gate Body Leakage
                                            IGSS      --    --   +100    nA
(VGS=+20V, VDS=0V)
Static Drain-Source On-State Resistance
(ID=50mA ,VGS=4.5V)                        RDS(ON)    --    --     8      
(ID=400mA ,VGS=10V)                                               7.5
Input Capacitance 
                                            CISS      --    --    50     pF
(VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance
(VGS=0V, VDS=25V,f=1MHz)                    COSS      --    --    25     pF

Turn-ON Time 
                                            t(on)     --    --    20      ns
(VDS=30V, ID=200mA, RGEN=25)
Turn-OFF Time 
                                            t(off)    --    --    40      ns
(VDS=30V, ID=200mA, RGEN=25)
Reverse Recovery Time 
(ISD=800mA, VGS=0V)                          trr      --   400    --      ns

1. FR-5=1.0



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