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            G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
                                      ro- Ele

GMB772
SOT-89 (SOT-89 transistors)




(Ta=25)
(T
CHARACTERISTIC                           Symbol    Rating          Unit
                                                                   

Collector-Base Voltage
                                          VCBO       -40            V
-

Collect-Emitter Voltage
                                          VCEO       -30            V
-
Emitter-Base Voltage
                                          VEBO      -5.0            V
-
Collector Current DC
                                              Ic    -3.0            A
-
Collector Current pulse
                                              Ic    -7.0            A
-
Collector Power Dissipation
                                              PC     0.5            W

Junction Temperature
                                              Tj    150             


Storage Temperature Range
                                          Tstg     -55150           



HFE RANGE     

60-120    100-200         160-320   200~400
                                    200~400
                 
                G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
                                          ro- Ele

GMB772


ELECTRICAL CHARACTERISTICS 

(TA=25 unless otherwise noted  25)
   =25

Characteristic                        Symbol     Test Condition   Min   TYP Max      Unit
                                                                                     


Collector Cutoff Current                          VCB=-30V,              --
                                        ICBO                       --         -1.0   A
                                                    IE=0

Emitter Cutoff Current
                                        IEBO     VEB=-5V,IC=0      --    --   -1.0   A


Collector-Base Breakdown Voltage
                                      V(BR)CBO    IC=-100A        -40    --   --      V
-

Collector-Emitter Breakdown Voltage
                                      V(BR)CEO     IC=-10mA       -30    --   --      V
-

Emitter-Base Breakdown Voltage
                                      V(BR)EBO    IE=-100A         -5    --   --      V
-

DC Current Gain                                    VCE=-2V,
                                        HFE                        60    --   400     --
                                                    IC=-1A

Collector Saturation Voltage                      IC=-2A, IB=-
                                      VCE(sat)                     --    --   -0.5    V
                                                    200mA

Base Saturation Voltage                           IC=-2A, IB=-
                                      VBE(sat)                     --    --   -1.5    V
                                                    200mA

Transition Frequency                               VCE=-5V,
                                         fT                        --    80   --     MHz
                                                  IC=-100mA


Collector Output Capacitance                       VCB=-10V,
                                        Cob                        --    55   --      pF
                                                 IE=0,f=1MHz
         
         G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
                                   ro- Ele

GMB772

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