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bc856


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                  Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)




MAXIMUM            RATINGS 

Characteristic                 Symbol GM856A,B GM857A,B,C GM858A,B,C                Unit
                                      (BC856A,B) (BC857A,B,C) (BC858A,B,C)          
Collector-Emitter Voltage
                                VCEO      -65              -45           -30        Vdc

Collector-Base Voltage
                                VCBO      -80              -50           -30        Vdc

Emitter-Base Voltage
                                VEBO      -5.0             -5.0          -5.0       Vdc

Collector Current Continuous
                                 Ic      -100              -100         -100        mAdc
-

THERMAL CHARACTERISTICS 

Characteristic                                   Symbol           Max           Unit
                                                                                
Total Device Dissipation                           PD
                                                                  225           mW
FR-5 Board(1)
TA=25 25
                                                                  1.8           mW/
Derate above25  25 
Total Device Dissipation                          PD              300           mW
Alumina Substrate ,(2)TA=25
Derate above25  25                                                2.4           mW/

Thermal Resistance Junction to Ambient
                                                  RJA             417           /W


Junction and Storage Temperature
                                                 TJ,Tstg                -55to+150


DEVICE           MARKING 
GM856A(BC856A)=3A;GM856B(BC856B)=3B;
GM856A(BC856A)=3A;GM856B(BC856B)
      (BC856A)=3A;GM856B (BC856B)=3B;
GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G
GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G
      (BC857A)=3E;GM857B (BC857B)=3F;GM857 C(BC857C)=3
GM858A(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)=3L
GM858A(BC858A)
      (BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)
                         (BC858B)=3K;GM858C (BC858C)=3L
                   
                   Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)
ELECTRICAL CHARACTERISTICS 
(TA=25 unless otherwise noted  25)
   =25                           )
Characteristic                          Symbol    Min       Max                 Unit
                                                                                
OFF CHARACTERISTICS 
                                       V(BR)CEO
Collector-Emitter Breakdown Voltage
                                        856A,B     -65

                                       857A,B,C    -45
(Ic=-10mAdc,IB=0)
                                       858A,B,C    -30           --             Vdc
                                       V(BR)CBO
Collector-Base Breakdown Voltage
                                        856A,B     -80

                                       857A,B,C    -50
(Ic=-10Adc,IE=0)
                                       858A,B,C    -30           --             Vdc
                                       V(BR)EBO
Emitter-Base Breakdown Voltage
                                        856A,B     -5.0

                                       857A,B,C    -5.0
(IE=-10Adc,Ic=0)
                                       858A,B,C    -5.0          --             Vdc
Collector Cutoff Current 
(VCB=-30v)                       ICBO                            -15            nA
(VcB=-30Vdc,TA=150)                                 --           -4.0           uA
ON CHARCTERISTICS 
Characteristic                Symbol              Min Typ Max Unit
                                                     
DC Current Gain                  HFE                           --
                          856A, 857A, 858A             90
(Ic=-10uAdc,VCE=-5.0Vdc)  856B, 857B, 858B            150  --
                             857C,858C                270
                          856A, 857A, 858A        125 180 250
(Ic=-2.0mAdc,VCE=-5.0Vdc) 856B, 857B, 858B        220 290 475
                             857C,858C            420 520 800
Collector-Emitter Saturation Voltage
                                       VCE(sat)
(Ic=-10mAdc, IB=-0.5mAdc)                                 --             -0.3
(Ic=-100mAdc, IB=-5.0mAdc)                                --            -0.65    Vdc
Base-Emitter Saturation Voltage

                                       VBE(sat)
(Ic=-10mAdc, IB=-0.5mAdc)                                 -0.7
(Ic=-100mAdc, IB=-5.0mAdc)                                -0.9                   Vdc
Base-Emitter Voltage 
(Ic=-2.0mAdc, VCE=-5.0Vdc)             VBE(on)    -0.6    --            -0.75
(Ic=-10mAdc, VCE=-5.0Vdc)                          --     --            -0.82     V
              
              Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)
SMALL-SIGNAL CHARACTERISTICS 
Characteristic                      Symbol   Min   Typ   Max   Unit
                                                               
Current-Gain-Bandwidth Product
-                                     fT     100    --    --   MHz
(Ic=-10mAdc,VCE=-5.0Vdc,f=100MHz)
Output Capacitance 
                                     Cobo     --    --   4.5   pF
(VCB=-10Vdc, IE=0, f=1.0MHz)
Noise Figure 
(VCE=-5.0Vdc, IC=-200Adc,            NF       --    --    10   dB
Rs=2.0kf=1.0KHz BW=200Hz)
DIMENSION 
(UNIT)mm



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