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gm2301


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                  Guilin Strong Micro-Electronics Co.,Ltd.
GM2301

SOT-23 (SOT-23 Field Effect Transistors)




P-Channel Enhancement-Mode MOS FETs

P  MOS 

MAXIMUM          RATINGS 

Characteristic                   Symbol     Max        Unit
                                                       

Drain-Source Voltage
                                  BVDSS       -20       V
-
Gate- Source Voltage
                                   VGS        +10       V
-
Drain Current (continuous)
                                    ID       -2.8       A
-
Drain Current (pulsed)
                                   IDM        -10       A
-
Total Device Dissipation
                                   PD        900       mW
TA=25 25

Junction                           TJ        150       


Storage Temperature                Tstg    -55to+150   


DEVICE           MARKING 

GM2301=A1
GM2301
  2301=
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GM2301


ELECTRICAL CHARACTERISTICS 

(TA=25 unless otherwise noted  25)

Characteristic                            Symbol    Min    Typ   Max    Unit
                                                                        

Drain-Source Breakdown Voltage
                                          BVDSS     -20     --    --     V
-(ID = -250uA ,VGS=0V)

Gate Threshold Voltage
                                          VGS(th)   -0.5    --   -1.5    V
(ID = -250uA ,VGS= VDS)

Diode Forward Voltage Drop
                                           VSD       --     --   -1.5    V
(IS= -0.75A ,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= -16V)                        IDSS      --     --    -1    uA
(VGS=0V, VDS= -16V, TA=55)                                       -10
Gate Body Leakage
                                           IGSS      --     --   +100   nA
(VGS=+10V, VDS=0V)

Static Drain-Source On-State Resistance
                                          RDS(ON)    --     --   100    m
(ID= -2.8A ,VGS= -4.5V)

Static Drain-Source On-State Resistance
                                          RDS(ON)    --     --   120    m
(ID= -2A ,VGS= -2.5V)

Input Capacitance 
                                           CISS      --    600    --    pF
(VGS=0V, VDS= -10V,f=1MHz)

Output Capacitance 
                                          COSS       --    120    --    pF
(VGS=0V, VDS= -10V,f=1MHz)

Turn-ON Time 
                                           t(on)     --     8     --     ns
(VDS= -10V, ID= -2.8A, RGEN=6)

Turn-OFF Time 
                                           t(off)    --     60    --     ns
(VDS= -10V, ID= -2.8A, RGEN=6)


Pulse Width<300s; Duty Cycle<2.0%
            
            Guilin Strong Micro-Electronics Co.,Ltd.
GM2301

DIMENSION   



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