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m28s


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                Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S




FEATURES       

High hFE 
NPN silicon    NPN 

MAXIMUM        RATINGS (Ta=25)
                       (T

CHARACTERISTIC                    Symbol   Rating   Unit
                                                    

Collector-Base Voltage
                                   VCBO      40      V
-
Collector-Emitter Voltage
                                   VCEO      20      V
-
Emitter-Base Voltage
                                   VEBO      5       V
-

Collector Current-Pulse
                                    Ic      1000    mA
-

Collector Power Dissipation
                                    PC      300     mW


Junction Temperature
                                    Tj      150      


Storage Temperature Range
                                   Tstg    -55150    



DEVICE        MARKING 

M28S=28S.
M28S=28S.
300~600 500~700        600~1200
                       
                      Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S

ELECTRICAL CHARACTERISTICS 
TA=25
T =25 unless otherwise noted  25 
                       noted

Characteristic                         Symbol      Test Condition   Min. Typ. Max.      Unit
                                                                                        

Collector Cutoff Current
                                         ICBO      VCB=25V,IE=0      --    --    100    nA

Emitter Cutoff Current
                                         IEBO      VEB=5V,I C=0      --    --    100    nA

Collector-Base Breakdown Voltage
                                       V(BR)CBO     IC=100A          40    --    --      V
-

Collector-Emitter Breakdown Voltage
                                       V(BR)CEO       IC=1mA         20    --    --      V
-

Emitter-Base Breakdown Voltage
                                       V(BR)EBO     IE=100A           5    --    --      V
-

DC Current Gain                                      VCE=1V,
                                         hFE                         300   --    1200    --
                                                    IC=100mA

Transition Frequency
                                          fT      VCE=5V,IC=10mA     --    120   --     MHz


Collector-Emitter Saturation Voltage                IC=600mA,
                                       VCE(sat)                      --    --    0.55    V
-                                                    IB=20mA
            
            Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S

DIMENSION   



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